unisonic technologies co., ltd ktd863 preliminary npn epitaxial silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2014 unisonic technologies co., ltd qw-r211-020.a triple diffused npn transistor ? description the utc ktd863 is a triple diffused npn transistor. it uses utc?s advanced technology to provide customers with high collector-emitter breakdown voltage and high collector current capability, etc. the utc ktd863 is suitable for voltage regulator, relay and ramp driver, etc. ? features * high collector-emitter voltage * high collector current capability ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 ktd863l-x-t9n-b ktd863g-x-t9n-b to-92nl e c b tape box ktd863l-x-t9n-k ktd863g-x-t9n-k to-92nl e c b bulk ? marking information package marking to-92nl utc ktd863 1 data code l: lead free g: halogen free
ktd863 preliminary npn epitaxial silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r211-020.a ? absolute maximum ratings (t a =25 c) parameter symbol ratings unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 5 v continuous collector current dc i c 1 a pulse i cp 2 a collector power dissipation p c 1 w junction temperature t j 150 c storage temperature range t stg -55~+150 c note: absolute ma ximum ratings are stress ratings only and f unctional device operation is not implied. absolute maximum ratings are those values beyo nd which the device could be permanently damaged. ? electrical characteristics (t a =25 c) parameter symbol test conditions min typ max unit collector-emitter breakdown voltage bv ceo i c =1ma, i b =0 60 v collector cut-off current i cbo v cb =50v, i e =0 1 a emitter cut-off current i ebo v eb =4v, i c =0 1 a collector-emitter satu ration voltage v ce ( sat ) i c =500ma, i b =50ma 0.15 0.5 v base-emitter satura tion voltage v be ( sat ) i c =500ma, i b =50ma 0.85 1.2 v dc current gain h fe1 i c =50ma,v ce =2v 60 320 h fe2 i c =1a,v ce =2v 30 transition frequency f t i c =50ma, v ce =10v 150 mhz collector output capacitance c ob v cb =10v, f=1mhz, i e =0 12 pf ? classification of hfe1 rank o y gr range 60~120 100~200 160~320
ktd863 preliminary npn epitaxial silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r211-020.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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